Power MOS V® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance.
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Benefits.
Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS
Parameter Drain - S.
Full PDF Text Transcription for APTM100U13S (Reference)
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APTM100U13S. For precise diagrams, and layout, please refer to the original PDF.
APTM100U13S Single switch Series & parallel diodes MOSFET Power Module SK CR1 D VDSS = 1000V RDSon = 130mΩ typ @ Tj = 25°C ID = 65A @ Tc = 25°C Application • • • Motor co...
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130mΩ typ @ Tj = 25°C ID = 65A @ Tc = 25°C Application • • • Motor control Switched Mode Power Supplies Uninterruptible Power Supplies S Q1 G Features • Power MOS V® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance • • www.DataSheet4U.
APTM100U13S Datasheet
