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APTM10DSKM09T3 Datasheet PDF

Advanced Power Technology APTM10DSKM09T3

MOSFET Power Module

Part No. APTM10DSKM09T3
Datasheet APTM10DSKM09T3 Download
Manufacturer
Advanced Power Technology
Description MOSFET Power Module
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APTM10DSKM09T3 datasheet page 1 preview

FEATURES

● Power MOS V® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged
● Kelvin source for easy drive
● Very low stray inductance Symmetrical design
● Internal thermistor for temperature monitoring
● High level of integration Benefits
● Outstanding performance at high frequency operation
● Direct mounting to heatsink (isolated package)
● Low junction to case thermal resistance
● Solderable terminals both for power and signal for easy PCB mounting
● Low profile
● Each leg can be easily paralleled to achieve a single buck of twice the current capability 18 29 15 30 31 R1 32 16 28 27 26 25 23 22 20 19 18 16 15 29 30 31 32 2 3 4 7 8 10 11 12 14 13 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … Absolute maximum ratings Symbol VDSS These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – 1–6 APTM10DSKM09T3 – Rev 0 Max ratings U...
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