APTM20AM10ST Datasheet | Advanced Power Technology

Features - Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged - Kelvin source for easy drive - Very low stray inductance - Symmetrical design - Lead frames for power connections - Internal thermistor for temperature monitoring - High level of integration Benefits - Outstanding performance at high frequency operation - Direct mounting to heatsink (isolated package) - Low junction to case thermal resistance - Solderable terminals both for power and signal for easy PCB mounting - Low profile G1 OUT S1 Q2 G2 0/VBU S S2 NTC1 .. OUT VBUS OUT 0/VBUS S1 G1 S2 G2 NTC2 NTC1 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Max ratings 200 175 131 700 ±30 10 694 89 50 2500 Unit V A V m W W A m J Tc = 25°C These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website - http://.advancedpower. 1- 6 - Rev 2 May, 2004 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics...