APTM20SKM08T Datasheet | Advanced Power Technology

Features - Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections Internal thermistor for temperature monitoring High level of integration S1 0/VBU S SENSE - - 0/VBU S NT C1 .. - - 0/VBUS SENSE Benefits VBUS 0/VBUS - - - - - S1 G1 0/VBUS SENSE NTC2 NTC1 Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc= 25°C Tc = 80°C Max ratings 200 208 155 832 ±30 8 781 100 50 3000 Unit V A V m W W A m J May, 2004 1- 6 APTM20SKM08T - Rev 2 Tc = 25°C These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website - http://.advancedpower. All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics...