APTM20UM04S-ALN
APTM20UM04S-ALN is MOSFET Power Module manufactured by Advanced Power Technology.
Features
- Power MOS 7® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
- Kelvin source for easy drive
- Very low stray inductance
- Symmetrical design
- M5 power connectors
- High level of integration
- Al N substrate for improved thermal performance
Q1 G
..
SK G
Benefits
- Outstanding performance at high frequency operation
- Direct mounting to heatsink (isolated package)
- Low junction to case thermal resistance
- Low profile
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS
Parameter Drain
- Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate
- Source Voltage Drain
- Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C
Tc = 25°C
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website
- http://.advancedpower.
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APTM20UM04S- -Al N Rev 0
Max ratings 200 417 310 1670 ±30 4 1560 100 50 3000
Unit V A V mΩ W A m J
July, 2004
APTM20UM04S-Al...
