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APTM50AM24SC Datasheet PDF

Advanced Power Technology APTM50AM24SC

MOSFET Power Module

Part No. APTM50AM24SC
Datasheet APTM50AM24SC Download
Manufacturer
Advanced Power Technology
Description MOSFET Power Module
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APTM50AM24SC datasheet page 1 preview

FEATURES

● Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged
● Parallel SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration MOSFET Power Module
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● G1 S1 VBUS 0/VBUS OUT
● S2 G2 Benefits
● Outstanding performance at high frequency operation
● Direct mounting to heatsink (isolated package)
● Low junction to case thermal resistance
● Low profile Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Tc = 25°C mJ These Devices are sensitive to Electrostatic Discharge.
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