APTM50AM25FT Datasheet | Advanced Power Technology

Features - Power MOS V® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic diode - Avalanche energy rated - Very rugged Kelvin source for easy drive Kelvin Drain for VDS monitoring Very low stray inductance - Symmetrical design - M5 power connectors Internal thermistor for temperature monitoring High level of integration - - - .. 0/VBUS VBUS DK1 NC G1 SK1 NC SK2 G2 NC DK2 NC NTC1 NTC2 - - Benefits - - - - Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals for signal and M5 for power for easy PCB mounting Max ratings 500 149 111 450 ±30 25 1250 149 30 1300 Unit V A V mΩ W A m J Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Tc = 25°C Tc = 80°C These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website - http://.advancedpower. 1-3 - Rev 0 Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C June, 2003 Electrical Characteristics Symbol Characteristic BVDSS Drain - Source Breakdown Voltage IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions VGS = 0V, ID = 1m...