APTM50DUM35T Datasheet | Advanced Power Technology

Features - Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged - Kelvin source for easy drive - Very low stray inductance - Symmetrical design - Lead frames for power connections - Internal thermistor for temperature monitoring - High level of integration Benefits - Outstanding performance at high frequency operation - Direct mounting to heatsink (isolated package) - Low junction to case thermal resistance - Solderable terminals both for power and signal for easy PCB mounting - Low profile D1 Q1 D2 Q2 G1 G2 S1 S NTC1 S2 NTC2 .. G2 S2 D2 D1 D2 S1 G1 S2 G2 NTC2 NTC1 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Max ratings 500 99 74 396 ±30 35 781 51 50 3000 Unit V A V m W W A m J Tc =...