Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated.
Parallel SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF Kelvin source for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections Internal thermistor for temperature monitoring High level of integration
Q2
CR2B
CR4B
Q4
G2 S2 NTC.
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
APTM50HM75SCT
Full bridge
Series & SiC parallel diodes
VDSS = 500V RDSon = 75mW max @ Tj = 25°C ID = 46A @ Tc = 25°C
Application · Motor control · Switched Mode Power Supplies · Uninterruptible Power Supplies
Q3
MOSFET Power Module
VBUS CR1A CR3A
Q1
CR1B
CR3B
G1 S1 CR2A OUT1 OUT2 CR4A
G3 S3
Features · Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated · Parallel SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF Kelvin source for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections Internal thermistor for temperature monitoring High level of integration
Q2
CR2B
CR4B
Q4
G2 S2 NTC