Advanced Power Technology APTM50UM09F-ALN
MOSFET Power Module
| Part No. | APTM50UM09F-ALN |
|---|---|
| Datasheet | APTM50UM09F-ALN Download |
| Manufacturer |  Advanced Power Technology |
| Description | MOSFET Power Module |
| Buy | Stock & Price |
FEATURES
● Power MOS 7® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged● Kelvin source for easy drive
● Very low stray inductance - Symmetrical design - M5 power connectors
● High level of integration
● AlN substrate for improved thermal performance Benefits
● Outstanding performance at high frequency operation
● Direct mounting to heatsink (isolated package)
● Low junction to case thermal resistance
● Low profile G DK DK S D SK G Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Tc = 25°C mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
