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APTM50UM19S Datasheet PDF

Advanced Power Technology APTM50UM19S

MOSFET Power Module

Part No. APTM50UM19S
Datasheet APTM50UM19S Download
Manufacturer
Advanced Power Technology
Description MOSFET Power Module
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APTM50UM19S datasheet page 1 preview

FEATURES

● Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Low stray inductance - M6 power connectors - M4 signal connectors High level of integration
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● Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Max ratings 500 163 122 652 ±30 19 1136 46 50 2500 Unit V A V mW W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – 1–7 APTM50UM19S – Rev 1 May, 200...
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