ARF466B Datasheet | Advanced Power Technology

TO-264 ARF466A ARF466B mon Source RF POWER MOSFETs - CHANNEL ENHANCEMENT MODE 200V 300W 45MHz The ARF466A and ARF466B prise a symmetric pair of mon source RF power transistors designed for push-pull scientific, mercial, medical and industrial RF power amplifier applications up to 45 MHz. They have been optimized for both linear and high efficiency classes of operation. - Specified 150 Volt, 40.68 MHz Characteristics: - Output Power = 300 Watts. - Gain = 16d B (Class AB) - Efficiency = 75% (Class C) MAXIMUM RATINGS Symbol VDSS .. - Low Cost mon Source RF Package. - Low Vth thermal coefficient. - Low Thermal Resistance. - Optimized SOA for Superior Ruggedness. All Ratings: TC = 25°C unless otherwise specified. ARF466A_B UNIT Volts Amps Volts Watts °C/W °C Parameter Drain-Source Voltage Drain-Gate Voltage Continuous Drain Current @ TC = 25°C Gate-Source Voltage Total Power Dissipation @ TC = 25°C Junction to Case Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. 1000 1000 13 ±30 357 0.35 -55 to 150 300 VDGO ID VGS PD RθJC TJ,TSTG TL STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS RDS(ON) IDSS IGSS g fs VGS(TH) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA) Drain-Source On-State Resistance UNIT Volts 1000 0.90 25 250 ±100 3.3 2 7 9 4 (VGS = 10V, ID = 6.5A) ohms µA n A mhos Volts 8-2005 050-4925 Rev C Zero Gate Voltage Drain Current (VDS = 1000V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Forward Transconductance (VDS = 25V, ID = 6.5A) Gate Threshold Voltage (VDS = VGS, ID = 1m A) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://.advancedpower. DYNAMIC CHARACTERISTICS Symbol Ciss Coss Crss td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer...