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ARF475FL - N-channel Enhancement MODE Power MOSFETs

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Part number ARF475FL
Manufacturer Advanced Power Technology
File Size 105.70 KB
Description N-channel Enhancement MODE Power MOSFETs
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Common Source Push-Pull Pair D ARF475FL G S S G S S RF POWER MOSFET N - CHANNEL ENHANCEMENT MODE • Specified 150 Volt, 128 MHz Characteristics: • Output Power = 900 Watts Peak • Gain = 15dB (Class AB) www.DataSheet4U.com • Efficiency = 50% min MAXIMUM RATINGS Symbol VDSS VDGO ID VGS PD TJ,TSTG TL Parameter Drain-Source Voltage Drain-Gate Voltage Continuous Drain Current @ TC = 25°C Gate-Source Voltage Total Device Dissipation @ TC = 25°C Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. (each device) D 165V 300W 150MHz The ARF475FL is a matched pair of RF power transistors in a common source configuration. It is designed for high voltage push-pull or parallel operation in narrow band ISM and MRI power amplifiers up to 150 MHz.
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