Advanced Power Technology MDS1100
The MDS1100 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems at 1030 MHz, with the pulse width and duty required for MODE-S applications. The device has gold thin-film metalization and emitter ballasting for proven highest MTTF.- Max Operating Temp : 200°C
- Min Operating Temp : -65°C
Source:
Octopart
| Part No. | MDS1100 |
|---|---|
| Datasheet | MDS1100 Download |
| Manufacturer |  Advanced Power Technology |
| Description | 50 Volts Pulsed Avionics at 1030 MHz |
| Buy | Stock & Price |
GENERAL DESCRIPTION
The transistor includes input and output prematch for broadband capability. Low thermal resistance package reduces junction temperature, extends life. CASE OUTLINE 55TU-1ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation Device Dissipation @ 25°C1 8750 Maximum Voltage and Current Collector to Base Voltage (BVces) 65 4.5 Emitter to Base Voltage (BVebo) Collector Current (Ic) 100 Maximum Temperatures Storage Temperature -65 to +200 Operating Junction Temperature +200 W V V A °C DataSheet4U.com °C DataSheeELECTRICAL CHARACTERISTICS
@ 25°C SYMBOL Pout Pg ηc RL Tr Pd VSWR CHARACTERISTICS Power Out Power Gain Collector Efficiency Return Loss Rise Time Pulse Droop Load Mismatch Tolerance 1 TEST CONDITIONS F = 1030 MHz, Vcc = 50 Volts Note 2 MIN 1000 8.9 45 11 TYP MAX UNITS W dB % dB F = 1030 MHz, Vcc = 50 Volts Note 2 4.0:1 100 0.7 nS dB FUNCTIONAL CHARACTERISTICS @ 25°C BVebo BVces hFE θjc1 NOTES: Emitter to Base Breakdown Collector to Emitter Breakdown DC – Current Gain Thermal Resistance Ie = 50 mA Ic = 100 mA Vce = 5V, Ic = 5A 3.5 65 20 0.02 V V °C/W 1.
