Advanced Power Technology MRF5943C
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
| Part No. | MRF5943C |
|---|---|
| Datasheet | MRF5943C Download |
| Manufacturer |  Advanced Power Technology |
| Description | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
| Buy | Stock & Price |
FEATURES
● Maximum Available Gain = 17dB @ 300MHz● High fT – 1.2 GHz typical 1. Emitter 2. Base 3. Collector TO-39
DESCRIPTION
: Designed for general-purpose RF amplifier applications, such as pre-drivers, drivers, and oscillators.ABSOLUTE MAXIMUM RATINGS
(Tcase = 25°C) Symbol Parameter VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC P D TSTG Collector Current Total Device Dissipation Storage Temperature Thermal Data RTH(J-C) Thermal Resistance, Junction – Case Value 30 40 3.5 400 1.0 -65 to +150 Unit V V V mA W °C 125 ºC/W Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at or contact our factory direct.ELECTRICAL SPECIFICATIONS
(Tcase = 25°C) STATIC
