Datasheet4U Logo Datasheet4U.com

MRF5943C - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

Description

Designed for general-purpose RF amplifier applications, such as pre-drivers, drivers, and oscillators.

Features

  • Maximum Available Gain = 17dB @ 300MHz.
  • High fT.
  • 1.2 GHz typical 1. Emitter 2. Base 3. Collector TO-39.

📥 Download Datasheet

Datasheet Details

Part number MRF5943C
Manufacturer Advanced Power Technology
File Size 88.48 KB
Description RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Datasheet download datasheet MRF5943C Datasheet

📁 Similar Datasheet

  • MRF5943C - NPN SILICON HIGH FREQUENCY TRANSISTOR (ASI)
  • MRF5943 - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS (Microsemi)
  • MRF5003 - N-CHANNEL BROADBAND RF POWER FET (Motorola)
  • MRF5007 - N-CHANNEL BROADBAND RF POWER FET (Motorola)
  • MRF5007R1 - N-CHANNEL BROADBAND RF POWER FET (Motorola)
  • MRF501 - (MRF501 / MRF502) High Frequency Transistors (Motorola Semiconductor)
  • MRF5015 - N-CHANNEL BROADBAND RF POWER FET (Motorola)
  • MRF502 - (MRF501 / MRF502) High Frequency Transistors (Motorola Semiconductor)
  • MRF5035 - N-CHANNEL BROADBAND RF POWER FET (Motorola)
  • MRF511 - HIGH FREQUENCY TRANSISTOR (Motorola)
Other Datasheets by Advanced Power Technology
  • MRF5943 - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
  • MRF5943G - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
  • MRF517 - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
  • MRF553 - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
  • MRF553G - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
  • MRF557 - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
  • MRF557G - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
  • MRF559 - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

Full PDF Text Transcription

Click to expand full text
140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS MRF5943C Features • Maximum Available Gain = 17dB @ 300MHz • High fT – 1.2 GHz typical 1. Emitter 2. Base 3. Collector TO-39 DESCRIPTION: Designed for general-purpose RF amplifier applications, such as pre-drivers, drivers, and oscillators. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC P D TSTG Collector Current Total Device Dissipation Storage Temperature Thermal Data RTH(J-C) Thermal Resistance, Junction – Case Value 30 40 3.5 400 1.
Published: |