MS1281 Key Features
- 108 MHz 28 VOLTS GOLD METALLIZATION POUT = 150 WATTS GP = 9.2dB MINIMUM MON EMITTER CONFIGURATION
- Part: MS1281
- Manufacturer: Advanced Power Technology
- Size: 159.73 KB
Related Advanced Power Technology Datasheets
| Part Number | Description |
|---|---|
| MS1226 | RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS |
| MS1227 | RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS |
| MS1251 | RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS |
| MS1252 | RF AND MICROWAVE TRANSISTORS HF - VHF COMMUNICATION APPLICATIONS |
| MS1253 | RF & MICROWAVE TRANSISTORS HF/VHF APPLICATIONS |
MS1281 Description
The MS1281 is a 28V silicon NPN planar transistor designed primarily for VHF FM broadcast transmitters. Diffused emitter ballast provide infinite VSWR capability under rated operating conditions. RATINGS (Tcase = 25° C) Symbol VCBO VCEO VCES VEBO IC PD Tj T STG Parameter Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction...