Datasheet Details
| Part number | MS1329 |
|---|---|
| Manufacturer | Advanced Power Technology |
| File Size | 183.31 KB |
| Description | RF & MICROWAVE TRANSISTORS |
| Datasheet | MS1329-AdvancedPowerTechnology.pdf |
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Overview: RF & MICROWAVE TRANSISTORS VHF FM APPLICATIONS.
| Part number | MS1329 |
|---|---|
| Manufacturer | Advanced Power Technology |
| File Size | 183.31 KB |
| Description | RF & MICROWAVE TRANSISTORS |
| Datasheet | MS1329-AdvancedPowerTechnology.pdf |
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: The MS1629 is an epitaxial silicon NPN transistor designed primarily for 12.5 V Class C, AM amplifier applications in the 118 – 136 MHz and 28 V Class C ground station transmitters.
Emitter ballast resistors and gold metalitzation provide optimum VSWR capability.
MS1329 ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter VCBO Collector- Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage PDISS IC Power Dissipation Collector current TJ Junction Temperature TSTG Storage Temperature Thermal Data RTH(J-C) Thermal Resistance Junction-Case 053-7067 Rev - 10-2002 Value 65.0 35.0 4.0 75.0 6.5 +200 -65 to +150 2.3 Unit V V V W A °C °C °C/W MS1329 ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC Symbol Test Conditions BVces BVceo BVebo Icbo HFE IC = 200mA IC = 200 mA IE = 10 mA VCB = 30 V VCE = 5.0V VBE = 0 mA IB = 0 mA IC = 0 mA IE = 0 mA IC = 500 mA Min.
| Part Number | Description |
|---|---|
| MS1336 | RF & MICROWAVE TRANSISTORS |
| MS1337 | RF & MICROWAVE TRANSISTORS |
| MS1000 | RF & MICROWAVE TRANSISTORS |
| MS1001 | RF & MICROWAVE TRANSISTORS |
| MS1003 | RF & MICROWAVE TRANSISTORS |
| MS1006 | RF AND MICROWAVE TRANSISTORS |
| MS1007 | RF & MICROWAVE TRANSISTORS |
| MS1008 | RF & MICROWAVE TRANSISTORS |
| MS1011 | RF AND MICROWAVE TRANSISTORS |
| MS1051 | RF & MICROWAVE TRANSISTORS |