Datasheet Details
| Part number | MS1337 |
|---|---|
| Manufacturer | Advanced Power Technology |
| File Size | 103.92 KB |
| Description | RF & MICROWAVE TRANSISTORS |
| Datasheet | MS1337-AdvancedPowerTechnology.pdf |
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Overview: RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS.
| Part number | MS1337 |
|---|---|
| Manufacturer | Advanced Power Technology |
| File Size | 103.92 KB |
| Description | RF & MICROWAVE TRANSISTORS |
| Datasheet | MS1337-AdvancedPowerTechnology.pdf |
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: The MS1337 is a 12.5 volt epitaxial silicon NPN planar transistor designed primarily for Class C, VHF munication applications.
The MS1337 utilizes an emitter ballasted die geometry to withstand severe load mismatch conditions.
MS1337 ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter VCBO VCEO VCES VEBO IC Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current PDISS TJ Power Dissipation Junction Temperature TSTG Storage Temperature Thermal Data RTH(J-C) Junction-case Thermal Resistance 053-7069 Rev - 10-2002 Value 36 18 36 4.0 8.0 70 +200 -65 to +150 1.2 Unit V V V V A W °C °C °C/W MS1337 ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC Symbol Test Conditions BVCES BVCEO BVEBO ICBO HFE IC = 15 mA IE = 50 mA IE = 5 mA VCB = 15 V VCE = 5 V VBE = 0 mA IB = 0 mA IC = 0 mA IE = 0 mA IC = 250 mA Min.
| Part Number | Description |
|---|---|
| MS1336 | RF & MICROWAVE TRANSISTORS |
| MS1329 | RF & MICROWAVE TRANSISTORS |
| MS1000 | RF & MICROWAVE TRANSISTORS |
| MS1001 | RF & MICROWAVE TRANSISTORS |
| MS1003 | RF & MICROWAVE TRANSISTORS |
| MS1006 | RF AND MICROWAVE TRANSISTORS |
| MS1007 | RF & MICROWAVE TRANSISTORS |
| MS1008 | RF & MICROWAVE TRANSISTORS |
| MS1011 | RF AND MICROWAVE TRANSISTORS |
| MS1051 | RF & MICROWAVE TRANSISTORS |