MS1401 Datasheet | Advanced Power Technology

Features - - - - - 150 MHz 7.5 Volts mon Emitter POUT = 2.5 W Min. GP = 11.0 d B Gain DESCRIPTION : The MS1401 is a 7.5 V Class C epitaxial silicon NPN planar transistor designed primarily for VHF munications. It withstands severe mismatch under operating conditions. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter Value Unit VCBO VCER VCES VEBO IC PDISS TJ T STG Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature 36 16 36 4.0 1.7 15 +200 -65 to +150 V V V V A W °C °C Thermal Data RTH(j-c) Junction-Case Thermal Resistance 11.6 ° C/W Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at .ADVANCEDPOWER. or contact our factory direct. .. ELECTRICAL SPECIFICATIONS (Tcase = 25 ° C) STATIC Symbol Test Conditions Min. Value Typ. Max. Units BVCES BVCEO BVEBO ICER ICBO h FE IC = 10 m A IC = 50 m A IE = 2 m A VCE =10 V VCB =15 V VCE = 5 V VBE = 0 V IB = 0 m A IC = 0 m A RBE = 50 Ω IE = 0 m A IC = 200 m A 36 16 4.0 0.5 1.0 100 V V V m A m A DYNAMIC Symbol Test Conditions Min. Value Typ. Max. Units POUT GP COB f = 150 MHz f = 150 MHz f = 150 MHz VCC = 7.5 V VCC = 7.5 V VCB = 7.5 V 2.5 11 23 W Db PF IMPEDANCE DATA Freq. ZIN (Ω ) ZCL (Ω ) 150 MHz 160 MHz 170 MHz - j 0.4 1.9 - j 0.8 1.0 - j...