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MS2200 - RF AND MICROWAVE TRANSISTORS UHF PULSED APPLICATIONS

General Description

The MS2200 is a hermetically sealed, gold metallized silicon NPN DataSheet4U.com pulse power transistor mounted in a common base balanced configuration.

500 MHz.

Key Features

  • 500 Watts @ 250 µ Sec Pulse Width, 10% Duty Cycle Refractory Gold Metallization Emitter Ballasting And Low Resistance For Reliability and Ruggedness Infinite VSWR Capability At Specified Operating Conditions Input Matched, Common Base Configuration Balanced Configuration.

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Datasheet Details

Part number MS2200
Manufacturer Advanced Power Technology
File Size 374.58 KB
Description RF AND MICROWAVE TRANSISTORS UHF PULSED APPLICATIONS
Datasheet download datasheet MS2200 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS2200 RF AND MICROWAVE TRANSISTORS UHF PULSED APPLICATIONS Features • • • • • • 500 Watts @ 250 µ Sec Pulse Width, 10% Duty Cycle Refractory Gold Metallization Emitter Ballasting And Low Resistance For Reliability and Ruggedness Infinite VSWR Capability At Specified Operating Conditions Input Matched, Common Base Configuration Balanced Configuration DESCRIPTION: The MS2200 is a hermetically sealed, gold metallized silicon NPN DataSheet4U.com pulse power transistor mounted in a common base balanced configuration. The MS2200 is designed for applications requiring high peak power and low duty cycles within the frequency range of 400 – 500 MHz.