Advanced Power Technology MS2200
The MS2200 is a hermetically sealed, gold metallized silicon NPN DataSheet4U.com pulse power transistor mounted in a common base balanced configuration. The MS2200 is designed for applications requiring high peak power and low duty cycles within the frequency range of 400 – 500 MHz.| Part No. | MS2200 |
|---|---|
| Datasheet | MS2200 Download |
| Manufacturer |  Advanced Power Technology |
| Description | RF AND MICROWAVE TRANSISTORS UHF PULSED APPLICATIONS |
| Buy | Stock & Price |
APPLICATIONS
FEATURES
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● 500 Watts @ 250 µ Sec Pulse Width, 10% Duty Cycle Refractory Gold Metallization Emitter Ballasting And Low Resistance For Reliability and Ruggedness Infinite VSWR Capability At Specified Operating Conditions Input Matched, Common Base Configuration Balanced Configuration
DESCRIPTION
: DataSheeABSOLUTE MAXIMUM RATINGS
(Tcase = 25°C) Symbol Parameter Value Unit VCBO VCES VEBO IC PDISS TJ T STG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature 65 65 3.5 43.2 1167 +200 -65 to +150 V V V A W °C °C Thermal Data RTH(j-c) DataSheet4U.com Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at or contact our factory direct. Junction-Case Thermal Resistance 0.15 ° C/W DataSheet 4 U .com MS2200ELECTRICAL SPECIFICATIONS
(Tcase = 25 ° C) STATIC Symbol Test Conditions Min. Value Typ. Max.
