MS2208 Description
THE MS2208 IS A SILICON NPN BIPOLAR DEVICE SPECIFICALLY DESIGNED FOR PULSED POWER APPLICATIONS AT 1090 MHz. GOLD METALLIZATION AND EMITTER BALLASTING ASSURE HIGH RELIABILITY. DataShee RATINGS (Tcase = 25° C) Symbol Vcc IC PDISS TJ T STG Device Current Parameter Collector Supply Voltage Power Dissipation Value 55 27 1,360 +250 -65 to +200 Unit V A W °C °C Junction Temperature (Pulsed RF Operation) Storage Temperature...
MS2208 Key Features
- 1090 MHz MON BASE GOLD METALLIZATION CLASS C POUT = 500 W MIN. WITH 8.5 dB GAIN