Advanced Power Technology MS2208
THE MS2208 IS A SILICON NPN BIPOLAR DEVICE SPECIFICALLY DESIGNED FOR PULSED POWER APPLICATIONS AT 1090 MHz.| Part No. | MS2208 |
|---|---|
| Datasheet | MS2208 Download |
| Manufacturer |  Advanced Power Technology |
| Description | RF & MICROWAVE TRANSISTORS AVIONICS APPLICATION |
| Buy | Stock & Price |
APPLICATIONS
FEATURES
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● 1090 MHz COMMON BASE GOLD METALLIZATION CLASS C POUT = 500 W MIN. WITH 8.5 dB GAIN
DESCRIPTION
: GOLD METALLIZATION AND EMITTER BALLASTING ASSURE HIGH RELIABILITY. DataSheet4U.com DataSheeABSOLUTE MAXIMUM RATINGS
(Tcase = 25° C) Symbol Vcc IC PDISS TJ T STG Device Current * * * Parameter Collector Supply Voltage Power Dissipation * Value 55 27 1,360 +250 -65 to +200 Unit V A W °C °C Junction Temperature (Pulsed RF Operation) Storage Temperature Thermal Data RTH(J-C) * Junction-case Thermal Resistance* 0.11 ° C/W Applies to rated RF amplifier operation DataSheet4U.com Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at or contact our factory direct. DataSheet 4 U .com MS2208 STATICELECTRICAL SPECIFICATIONS
(Tcase = 25 ° C) Symbol BVCBO BVEBO BVCES ICES hFE IC = 50mA IE = 30mA IC = 50mA VBE = 0V VCE = 5 V Test Conditions IE = 0mA IC = 0mA VBE = 0mA VCE = 50V IC = 1A Value Min.
