Advanced Power Technology MS2210
The MS2210 avionics power transistor is a broadband, high peak pulse power device specifically designed for avionics applications requiring broad bandwidth with moderate duty cycle and pulse width DataSheet4U.com constraints such as ground/ship DME/TACAN. The MS2210 is also designed for specialized applications where reduced power is provided under pulse formats utilizing short pulse widths and high burst or overall duty cycles This device is capable of withstanding 15:1 VSWR mismatch load conditions at any phase angle under full rated conditions.| Part No. | MS2210 |
|---|---|
| Datasheet | MS2210 Download |
| Manufacturer |  Advanced Power Technology |
| Description | RF AND MICROWAVE TRANSISTORS AVIONICS APPLICATIONS |
| Buy | Stock & Price |
APPLICATIONS
FEATURES
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● 255 MHz BANDWIDTH GOLD METALLIZATION EMITTER SITE BALLASTED Pout = 300W MINIMUM Gp = 7.0 dB LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING 15:1 VSWR CAPABILITY
DESCRIPTION
: DataSheeABSOLUTE MAXIMUM RATINGS
Symbol PDISS IC VCC TJ T STG (Tcase = 25° C) Value 940 24 50 +200 - 65 to + 200 Parameter Power Dissipation* Device Current* Collector-Supply Voltage* Junction Temperature Storage Temperature Unit W A °C °C Thermal Data RTH(j-c)● Junction-Case Thermal Resistance* 0.16 ° C/W Applies only to rated RF operation. MS2210.PDF 4-15-03 DataSheet4U.com Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at or contact our factory direct. DataSheet 4 U .com MS2210 STATIC
ELECTRICAL SPECIFICATIONS
(Tcase (Tcase = 25 ° C) Symbol BVCBO BVEBO BVCER ICES hFE IC = 50 mA IE = 15 mA IC = 50 mA VCE = 50 V VCE = 5 V Test Conditions Min. IE = 0 mA IC = 0 mA RBE = 10 Ω IC = 5A 65...
