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MS2267
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS
Features
• • • • • • • 960 – 1215MHz 50 VOLTS 5:1 VSWR CAPABILITY @ RATED CONDITIONS INPUT/OUTPUT MATCHING POUT = 250 WATTS GP = 8.0 dB MINIMUM COMMON BASE CONFIGURATION
DESCRIPTION:
The MS2267 is a high power Class C NPN transistor specifically designed for TACAN/DME applications.
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This device is capable of operation under moderate pulse width and duty cycles. Low thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency. The MS2267 utilizes an emitter ballasted die geometry capable of operating into a 5:1 VSWR @ 1.0 dB overdrive.