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MS2472 - RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

General Description

The MS2472 is a hermetically sealed, gold metallized, silicon NPN power transistor.

The MS2472 is designed for applications requiring high peak power and low duty cycles such as IFF and DME.

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Datasheet Details

Part number MS2472
Manufacturer Advanced Power Technology
File Size 164.90 KB
Description RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS
Datasheet download datasheet MS2472 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS2472 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS Features DESIGNED FOR HIGH POWER PULSED IFF AND DME APPLICATIONS www.DataSheet4U.com • 600 W (typ.) IFF 1030 – 1090 MHz • 550 W (min.) DME 1025 – 1150 MHz • 1025 - 1150 MHz • POUT = 550 WATTS • GP = 5.6 dB MINIMUM • GOLD METALLIZATION • INTERNAL INPUT/OUTPUT MATCHED • COMMON BASE CONFIGURATION • DESCRIPTION: The MS2472 is a hermetically sealed, gold metallized, silicon NPN power transistor. The MS2472 is designed for applications requiring high peak power and low duty cycles such as IFF and DME. The MS2472 is internal input/output matched resulting in improved broadband performance and a low thermal resistance.