MS2472
Features
DESIGNED FOR HIGH POWER PULSED IFF AND DME APPLICATIONS ..
- 600 W (typ.) IFF 1030
- 1090 MHz
- 550 W (min.) DME 1025
- 1150 MHz
- 1025
- 1150 MHz
- POUT = 550 WATTS
- GP = 5.6 d B MINIMUM
- GOLD METALLIZATION
- INTERNAL INPUT/OUTPUT MATCHED
- MON BASE CONFIGURATION
- DESCRIPTION
:
The MS2472 is a hermetically sealed, gold metallized, silicon NPN power transistor. The MS2472 is designed for applications requiring high peak power and low duty cycles such as IFF and DME. The MS2472 is internal input/output matched resulting in improved broadband performance and a low thermal resistance.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25° C)
Symbol VCBO VCES VEBO IC PDISS TJ T STG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature Value 65 65 3.5 40 1350 200 -65 to +150 Unit V V V A W
ºC ºC
Thermal Data
RTH(J-C) Thermal Resistance Junction-case 0.06 ° C/W
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