MS3302 Overview
The MS3302 is a mon base silicon NPN microwave transistor designed for general purpose applications over the 1.0 3.0 GHz frequency range. The MS3302 utilizes an emitter ballasted die geometry for maximum load VSWR capability under rated conditions. RATINGS (Tcase = 25° C) Symbol PDISS VCC IC TJ T STG Parameter Power Dissipation Collector-Supply Voltage Device Current Junction Temperature Storage Temperature Value...
MS3302 Key Features
- 3.0 GHz
- GOLD METALIZATION
- EMITTER BALLASTED
- POUT = 4.5 W MINIMUM
- GP = 4.5 dB
- MON BASE CONFIGURATION