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MS3302 - RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS

General Description

The MS3302 is a common base silicon NPN microwave transistor designed for general purpose applications over the 1.0

3.0 GHz frequency range.

The MS3302 utilizes an emitter ballasted die geometry for maximum load VSWR capability under rated conditions.

Key Features

  • 3.0 GHz.
  • GOLD.

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Datasheet Details

Part number MS3302
Manufacturer Advanced Power Technology
File Size 171.26 KB
Description RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
Datasheet download datasheet MS3302 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS3302 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS Features • 3.0 GHz • GOLD METALIZATION www.DataSheet4U.com • EMITTER BALLASTED • POUT = 4.5 W MINIMUM • GP = 4.5 dB • ∞ :1 VSWR CAPABILITY @ RATED CONDITIONS • COMMON BASE CONFIGURATION DESCRIPTION: The MS3302 is a common base silicon NPN microwave transistor designed for general purpose applications over the 1.0 – 3.0 GHz frequency range. The MS3302 utilizes an emitter ballasted die geometry for maximum load VSWR capability under rated conditions.