Advanced Power Technology MSC1600M
The MSC1600M is a high power pulsed transistor specifically designed for IFF avionics applications. It is designed for operation under short pulse width and low duty cycle pulse conditions and is capable of withstanding a minimum 25:1 load mismatch at rated RF conditions.| Part No. | MSC1600M |
|---|---|
| Datasheet | MSC1600M Download |
| Manufacturer |  Advanced Power Technology |
| Description | RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS |
| Buy | Stock & Price |
APPLICATIONS
FEATURES
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● 1090 MHz 25:1 VSWR CAPABILITY POUT = 600 WATTS GP = 6.0 dB MINIMUM GOLD METALIZATION INPUT MATCHING COMMON BASE CONFIGURATION
DESCRIPTION
: Internal impedance matching and gold metallization ensure high product reliability and consistency.ABSOLUTE MAXIMUM RATINGS
(Tcase = 25° C) Symbol PDISS IC VCC TJ T STG Power Dissipation* (TC ≤ 100° C) Device Current* Collector - Base Voltage* Junction Temperature Storage Temperature Parameter Value 1670 43 55 +250 -65 to +200 Unit W A V °C °C Thermal Data RTH(J-C) Junction-case Thermal Resistance* 0.09 ° C/W *Applies only to rated RF amplifier operation Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at or contact our factory direct. MSC1600M STATICELECTRICAL SPECIFICATIONS
(Tcase = 25 ° C) Symbol BVCBO BVEBO BVCER ICES hFE IC = 25mA IE = 5mA IC = 50mA VCB = 50V VCE = 5V Test Conditions IE = 0mA IC = 0mA RBE = 10Ω IC = 2A Min.
