MSC4003 - RF AND MICROWAVE TRANSISTORS

Advanced Power Technology

General Description

The MSC4003 common-base, hermetically sealed silicon NPN microwave power transistor

Key Features

3:1 VSWR AT RATED.

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MSC4003 rf and microwave transistors by Advanced Power Technology - Datasheet Preview

Datasheet Details

Part number	MSC4003
Manufacturer	Advanced Power Technology
File Size	185.51 KB
Description	RF AND MICROWAVE TRANSISTORS
Datasheet	MSC4003 Datasheet

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Full PDF Text Transcription (Reference)

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140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 RF AND MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS MSC4003 Features • 3:1 VSWR AT RATED CONDITIONS • HERMETIC STRIPAC® PACKAGE • POUT = 2.5 W MIN. WITH 5.0 dB GAIN AT 4.0 GHz DESCRIPTION: The MSC4003 common-base, hermetically sealed silicon NPN microwave power transistor features a unique Microgrid™ structure and can withstand 3:1 VSWR at any phase angle under rated conditions. It is designed for Class C amplifier applications in the 2.0 – 4.4 GHz frequency range.