GENERAL DESCRIPTION
It utilizes gold metalization and diffused ballasting to provide high reliability and supreme ruggedness. CASE OUTLINE 55AU, Style 2 ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25oC Maximum Voltage and Current BVces Collector to Emitter Voltage BVebo Emitter to Base Voltage Ic Collector Current Maximum Temperatures Storage Temperature Operating Junction Temperature 6.0 Watts 40 Volts 3.5 Volts 300 mAmps - 55 to + 200oC + 200oC ELECTRICAL CHARACTERISTICS
@ 25 OC SYMBOL Pout Pin Pg Ft VSWR CHARACTERISTICS Power Out Power Input Power Gain Transition Frequency Load Mismatch Tolerance TEST CONDITIONS F = 500 MHz Ic = 140 mA Vcc = 12.5 Volts Vce = 20 V, Ic = 140 A MIN 0.5 12 3.4 TYP 0.8 0.02 13 3.7 30:1 MAX UNITS Watts Watts dB GHz BVebo BVces BVceo hFE Cob θjc Emitter to Base Breakdown Collector to Emitter Breakdown Collector to Emitter Breakdown DC Current Gain Capacitance Thermal Resistance Ie = 1 mA Ic =10 mA Ic = 10 mA Vce = 5 V, Ic = 100 mA Vcb = 28V, f = 1 MHz 3.5 50 22 20 2.0 3.0 33 Volts Volts Volts pF C/W o Initial Issue July 1997 GHz TECHNOLOGY INC.