1N23WG Datasheet | Advanced Semiconductor

SILICON MIXER DIODE DESCRIPTION: The ASI 1N23WG is a Silicon Mixer Diode Designed for Applications Operating From 8.0 to 12.4 GHz. PACKAGE STYLE DO- 23 Features : - High burnout resistance - Low noise figure - Hermetically sealed package - Matched pairs available by adding suffix “M” or “MR” for matched forward and reverse MAXIMUM RATINGS IF VR PDISS TJ TSTG 20 mA 1.0 V 2.0 (ERGS) @ TC = 25 °C -55 °C to +150 °C -55 °C to +150 °C NONE CHARACTERISTICS SYMBOL NF VSWR ZIF frange RL = 22 Ω TC = 25 °C TEST CONDITIONS F = 9375 MHz RL = 100 Ω Plo = 1.0 mW IF = 30 MHz NFif = 1.5 dB MINIMUM TYPICAL MAXIM 6.5 1.3 UNITS dB f = 1000 Hz 335 8.0 465 12.4 Ω GHz A D V A N C E D S E M...