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1N415E - SILICON MIXER DIODE

General Description

The ASI 1N415E is a Silicon Mixer Diode Designed for Applications Operating From 8.0 to 12.4 GHz.

Key Features

  • High burnout resistance.
  • Low noise figure.
  • Hermetically sealed package.

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Datasheet Details

Part number 1N415E
Manufacturer Advanced Semiconductor
File Size 15.94 KB
Description SILICON MIXER DIODE
Datasheet download datasheet 1N415E Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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1N415E SILICON MIXER DIODE DESCRIPTION: The ASI 1N415E is a Silicon Mixer Diode Designed for Applications Operating From 8.0 to 12.4 GHz. PACKAGE STYLE DO- 23 FEATURES: • High burnout resistance • Low noise figure • Hermetically sealed package MAXIMUM RATINGS IF VR PDISS TJ TSTG 20 mA 1.0 V 2.0 (ERGS) @ TC = 25 °C -55 °C to +150 °C -55 °C to +150 °C NONE CHARACTERISTICS SYMBOL NF VSWR ZIF frange RL = 22 Ω TC = 25 °C TEST CONDITIONS F = 9375 MHz RL = 100 Ω Plo = 1.0 mW IF = 30 MHz NFif = 1.5 dB MINIMUM TYPICAL MAXIM 7.5 1.3 UNITS dB f = 1000 Hz 335 8.0 465 12.4 Ω GHz A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV.