Advanced Semiconductor 1N415E
1N415E is a Silicon Mixer Diode Designed for Applications Operating From 8.0 to 12.4 GHz.| Part No. | 1N415E |
|---|---|
| Datasheet | 1N415E Download |
| Manufacturer |  Advanced Semiconductor |
| Description | SILICON MIXER DIODE |
| Buy | Stock & Price |
DESCRIPTION
: The ASI PACKAGE STYLE DO- 23FEATURES
:● High burnout resistance
● Low noise figure
● Hermetically sealed package
MAXIMUM RATINGS
IF VR PDISS TJ TSTG 20 mA 1.0 V 2.0 (ERGS) @ TC = 25 °C -55 °C to +150 °C -55 °C to +150 °C NONE CHARACTERISTICS SYMBOL NF VSWR ZIF frange RL = 22 Ω TC = 25 °C TEST CONDITIONS F = 9375 MHz RL = 100 Ω Plo = 1.0 mW IF = 30 MHz NFif = 1.5 dB MINIMUM TYPICAL MAXIM 7.5 1.3 UNITS dB f = 1000 Hz 335 8.0 465 12.4 Ω GHz A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE● NORTH HOLLYWOOD, CA 91605
● (818) 982-1200
● FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1