Part 1N415E
Description SILICON MIXER DIODE
Category Diode
Manufacturer Advanced Semiconductor
Size 15.94 KB
Advanced Semiconductor

1N415E Overview

Key Specifications

Max Operating Temp: 150 °C

Description

The ASI 1N415E is a Silicon Mixer Diode Designed for Applications Operating From 8.0 to 12.4 GHz. PACKAGE STYLE DO- 23.

Key Features

  • High burnout resistance
  • Low noise figure
  • Hermetically sealed package

Price & Availability

Seller Inventory Price Breaks Buy
No distributor offers were returned for this part.