1N415E
1N415E is SILICON MIXER DIODE manufactured by Advanced Semiconductor.
SILICON MIXER DIODE
DESCRIPTION:
The ASI 1N415E is a Silicon Mixer Diode Designed for Applications Operating From 8.0 to 12.4 GHz.
PACKAGE STYLE DO- 23
Features
:
- High burnout resistance
- Low noise figure
- Hermetically sealed package
MAXIMUM RATINGS
IF VR PDISS TJ TSTG 20 mA 1.0 V 2.0 (ERGS) @ TC = 25 °C -55 °C to +150 °C -55 °C to +150 °C
NONE
CHARACTERISTICS
SYMBOL
NF VSWR ZIF frange RL = 22 Ω
TC = 25 °C
TEST CONDITIONS
F = 9375 MHz RL = 100 Ω Plo = 1.0 mW IF = 30 MHz NFif = 1.5 dB
MINIMUM TYPICAL
MAXIM
7.5 1.3
UNITS dB f = 1000 Hz
335 8.0
465 12.4
Ω GHz
A D V A N C E D S E M I C O N D U C T O R, I N C.
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