Advanced Semiconductor 1N4387
The 1N4387 is a High Power Silicon Multiplier Varactor Diode.DESCRIPTION
:MAXIMUM RATINGS
IO VR PDISS TJ TSTG θJC O O 200 mA 150 V 20 W @ TC = 25 C -65 C to +150 C -65 C to +175 C 5.0 C/W O O O O 1 = Anode 2 = Cathode NONE CHARACTERISTICS SYMBOL VBR CT Q fin POUT(x3) PIN = 30 W IR = 10 µA VR = 6.0 V VR = 6.0 V TC = 25 C O TEST CONDITIONS f = 1.0 MHz f = 50 MHz FIN = 150 MHz MINIMUM 150 TYPICAL MAXIMUM 35 UNITS V pF --MHz W 200 150 15 30 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE● NORTH HOLLYWOOD, CA 91605
● (818) 982-1202
● FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1