The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
1N5709B
ABRUPT VARACTOR DIODE
PACKAGE STYLE DO-7 DESCRIPTION:
The ASI 1N5709B is an Abrupt Varactor Diode, designed for general purpose www.DataSheet4U.com applications.
MAXIMUM RATINGS
IR VR PDISS TJ TSTG θJC 20 nA 70 V 400 mW @ TA = 25 °C -65 °C to +175 °C -65 °C to +200 °C 250 °C/W
NONE
CHARACTERISTICS
SYMBOL
VBR IR CT CT4/CT60 Q IR = 10 µA VR = 60 V
TC = 25 °C
TEST CONDITIONS
MINIMUM
65
TYPICAL
MAXIMUM
20
UNITS
V nA µA pF ---
TA = 150 °C VR = 4.0 V VR = 4.0 V/VR = 60 V VR = 4.0 V f = 1.0 MHz f = 1.0 MHz f = 50 MHz 77.9 3.2 150
20 86.1 3.4
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV.
1N5709B Datasheet
