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1N5709B Datasheet Abrupt Varactor Diode

Manufacturer: Advanced Semiconductor

Overview: 1N5709B ABRUPT VARACTOR DIODE PACKAGE STYLE DO-7.

Datasheet Details

Part number 1N5709B
Manufacturer Advanced Semiconductor
File Size 38.59 KB
Description ABRUPT VARACTOR DIODE
Datasheet 1N5709B_AdvancedSemiconductor.pdf

General Description

: The ASI 1N5709B is an Abrupt Varactor Diode, designed for general purpose www.DataSheet4U.com applications.

MAXIMUM RATINGS IR VR PDISS TJ TSTG θJC 20 nA 70 V 400 mW @ TA = 25 °C -65 °C to +175 °C -65 °C to +200 °C 250 °C/W NONE CHARACTERISTICS SYMBOL VBR IR CT CT4/CT60 Q IR = 10 µA VR = 60 V TC = 25 °C TEST CONDITIONS MINIMUM 65 TYPICAL MAXIMUM 20 UNITS V nA µA pF --- TA = 150 °C VR = 4.0 V VR = 4.0 V/VR = 60 V VR = 4.0 V f = 1.0 MHz f = 1.0 MHz f = 50 MHz 77.9 3.2 150 20 86.1 3.4 A D V A N C E D S E M I C O N D U C T O R, I N C.

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 Specifications are subject to change without notice.

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