• Part: 1N5709B
  • Description: ABRUPT VARACTOR DIODE
  • Manufacturer: Advanced Semiconductor
  • Size: 38.59 KB
Download 1N5709B Datasheet PDF

Datasheet Summary

ABRUPT VARACTOR DIODE PACKAGE STYLE DO-7 DESCRIPTION: The ASI 1N5709B is an Abrupt Varactor Diode, designed for general purpose .. applications. MAXIMUM RATINGS IR VR PDISS TJ TSTG θJC 20 nA 70 V 400 mW @ TA = 25 °C -65 °C to +175 °C -65 °C to +200 °C 250 °C/W NONE CHARACTERISTICS SYMBOL VBR IR CT CT4/CT60 Q IR = 10 µA VR = 60 V TC = 25 °C TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS V nA µA pF --- TA = 150 °C VR = 4.0 V VR = 4.0 V/VR = 60 V VR = 4.0 V f = 1.0 MHz f = 1.0 MHz f = 50 MHz 77.9 3.2 150 20 86.1 3.4 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE - NORTH HOLLYWOOD, CA 91605 - (818) 982-1202 - FAX (818)...