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2N3570
NPN SILICON HIGH FREQUENCY TRANSISTOR
DESCRIPTION:
The 2N3570 is Designed for High Frequency Low Noise Amplifier and Oscillator Applications.
MAXIMUM RATINGS
IC VCB VCE VEB PDISS TJ TSTG θJC
O O
PACKAGE STYLE TO- 72
50 mA 30 V 15 V 3.0 V 200 mW @ TC = 25 C -65 C to +200 C -65 C to +200 C 500 C/W
O O O O
1 = EMITTER 3 = COLLECTOR
2 = BASE 4 = CASE
CHARACTERISTICS
SYMBOL
BVCEO BVCBO ICBO BVEBO hFE Cob hFE hfe rb´CC POSC NF IC = 2 mA IC = 1.0 µA VCB = 6.0 V
TC = 25 C
O
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
15 30 10 TA = 150 C
O
UNITS
V V µA V
1.0 3.0 20 150 0.75 20 150 4.25 5 60 6 7 6 8 3.75 1 --pF ----pF mW dB
IE = 10 µA VCE = 6.
2N3570 Datasheet
