Datasheet Summary
NPN SILICON HIGH FREQUENCY TRANSISTOR
DESCRIPTION:
The 2N3570 is Designed for High Frequency Low Noise Amplifier and Oscillator Applications.
MAXIMUM RATINGS
IC VCB VCE VEB PDISS TJ TSTG θJC
PACKAGE STYLE TO- 72
50 mA 30 V 15 V 3.0 V 200 mW @ TC = 25 C -65 C to +200 C -65 C to +200 C 500 C/W
1 = EMITTER 3 = COLLECTOR
2 = BASE 4 = CASE
CHARACTERISTICS
SYMBOL
BVCEO BVCBO ICBO BVEBO hFE Cob hFE hfe rb´CC POSC NF IC = 2 mA IC = 1.0 µA VCB = 6.0 V
TC = 25 C
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
15 30 10 TA = 150 C
UNITS
V V µA V
1.0 3.0 20 150 0.75 20 150 4.25 5 60 6 7 6 8 3.75 1 --pF ----pF mW dB
IE = 10 µA VCE = 6.0 V VCB = 6 V VCE = 6 V VCE = 6...