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2N4429 - NPN SILICON RF POWER TRANSISTOR

General Description

The ASI 2N4429 is Designed for Class C Amplifier Applications Up to 1,000 MHz.

Key Features

  • PG = 7.5 dB Typ. at 1.0 W/1000 MHz.
  • Emitter Ballasting for Ruggedness.
  • Omnigold™ Metallization System D C J E F G H K #8-32 UNC.

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Datasheet Details

Part number 2N4429
Manufacturer Advanced Semiconductor
File Size 14.16 KB
Description NPN SILICON RF POWER TRANSISTOR
Datasheet download datasheet 2N4429 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N4429 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2N4429 is Designed for Class C Amplifier Applications Up to 1,000 MHz. B PACKAGE STYLE .280 4L STUD A 45° FEATURES: • PG = 7.5 dB Typ. at 1.0 W/1000 MHz • Emitter Ballasting for Ruggedness • Omnigold™ Metallization System D C J E F G H K #8-32 UNC MAXIMUM inches / mm I MAXIMUM RATINGS IC VCB PDISS TJ TSTG θJC 1.0 A 45 V 7.0 W @ TC = 25 C -65 to +200 C -65 to +150 C 25 C/W O O O O DIM A B C D E F G H I J K MINIMUM inches / mm 1.010 / 25.65 .220 / 5.59 .270 / 6.86 .003 / 0.08 .117 / 2.97 .572 / 14.53 .130 / 3.30 .245 / 6.22 .640 / 16.26 .175 / 4.45 .275 / 6.99 1.055 / 26.80 .230 /5.84 .285 / 7.24 .007 / 0.18 .137 / 3.48 .255 / 6.48 .217 / 5.51 .285 / 7.