2N4429
2N4429 is NPN SILICON RF POWER TRANSISTOR manufactured by Advanced Semiconductor.
DESCRIPTION
:
The ASI 2N4429 is Designed for Class C Amplifier Applications Up to 1,000 MHz.
PACKAGE STYLE .280 4L STUD
A 45°
FEATURES
:
- PG = 7.5 d B Typ. at 1.0 W/1000 MHz
- Emitter Ballasting for Ruggedness
- Omnigold™ Metallization System
D C J E F G H K #8-32 UNC MAXIMUM inches / mm
MAXIMUM RATINGS
IC VCB PDISS TJ TSTG θJC 1.0 A 45 V 7.0 W @ TC = 25 C -65 to +200 C -65 to +150 C 25 C/W
DIM A B C D E F G H I J K
MINIMUM inches / mm
1.010 / 25.65 .220 / 5.59 .270 / 6.86 .003 / 0.08 .117 / 2.97 .572 / 14.53 .130 / 3.30 .245 / 6.22 .640 / 16.26 .175 / 4.45 .275 / 6.99
1.055 / 26.80 .230 /5.84 .285 / 7.24 .007 / 0.18 .137 / 3.48
.255 / 6.48 .217 / 5.51 .285 / 7.24
ORDER CODE: ASI10900
CHARACTERISTICS
SYMBOL
BVCBO BVCER BVEBO ICBO h FE Ft Cob PG ηC IC = 1 m A IC = 20 m A IE = 1 m A VCE = 28 V VCE = 5.0 V VCE = 20 V VCB = 28 V VCE = 28 V
TC = 25 C
NONE
TEST CONDITIONS
RBE = 10 Ω
MINIMUM TYPICAL MAXIMUM
45 45 3.5 250
UNITS
V V V µA --MHz
IC = 100 m A IC = 100 m A f = 1.0 MHz POUT = 5.0 W f = 1,000 MHz
15 600
5.0 6.5 40 7.5 50 p F d B %
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL...