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2N5583 Datasheet PDF

Advanced Semiconductor 2N5583

The 2N5583 is Designed for High Frequency Amplifier, and Non Saturated Switching Applications.
Part No. 2N5583
Datasheet 2N5583 Download
Manufacturer
Advanced Semiconductor
Description PNP Silicon High Frequency Transistor
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2N5583 datasheet page 1 preview

DESCRIPTION

: PACKAGE STYLE

MAXIMUM RATINGS

IC VCE PDISS TJ TSTG θJC 500 mA -30 V 1.0 W @ TA = 25 °C 5.0 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +200 °C 350 °C/W CHARACTERISTICS SYMBOL BVCEO BVCBO BVEBO ICBO IEBO hFE VCE(SAT) VBE(ON) ft Ccb Ceb rb'Cc td tr tf IC = 10 mA IC = 10 µA TC = 25 °C TEST CONDITIONS IC = 100 µA VCB = -20 V VEB = -2.0 V VCE = -2.0 V VCE = -5.0 V IC = 100 mA VCE = -2.0 V VCE = -10 V VCB = -15 V VEB = -0.5 V VCB = -10 V VCC = -31.4 V RC = 160 Ω w w .D w IC = 40 mA IC = 100 mA IC = 300 mA IB = 10 mA IC = 100 mA IC = 40 mA IC = 100 mA t a S a e h t e U 4 .c m o NONE MINIMUM -30 -30 -3.0 TYPICAL MAXIMUM UNITS V V V 50 500 20 25 15 100 -0.8 -1.8 nA nA --V V f = 100 MHz f = 100 MHz f = 100 KHz f = 100 KHz 1000 1300 5.0 35 8.2 1.2 2.2 2.0 IC = 50 mA IC = 150 mA RE = 26.6 Ω f = 63.6 MHz w A D V A N C E D S E M I C O N D U C T O R, I N C. w w Specifications are subject to change without notice. .D a S a t e e h U 4 t MHz pF pF m o .c pS nS REV. B 7525 ETHEL AVENUE
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