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2N5583
PNP SILICON HIGH FREQUENCY TRANSISTOR
DESCRIPTION:
The 2N5583 is Designed for High Frequency Amplifier, and Non Saturated Switching Applications.
PACKAGE STYLE
MAXIMUM RATINGS
IC VCE PDISS TJ TSTG θJC 500 mA -30 V 1.0 W @ TA = 25 °C 5.0 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +200 °C 350 °C/W
CHARACTERISTICS
SYMBOL
BVCEO BVCBO BVEBO ICBO IEBO hFE VCE(SAT) VBE(ON) ft Ccb Ceb rb'Cc td tr tf IC = 10 mA IC = 10 µA
TC = 25 °C
TEST CONDITIONS
IC = 100 µA VCB = -20 V VEB = -2.0 V VCE = -2.0 V VCE = -5.0 V IC = 100 mA VCE = -2.0 V VCE = -10 V VCB = -15 V VEB = -0.5 V VCB = -10 V VCC = -31.4 V RC = 160 Ω
w
w
.D w
IC = 40 mA IC = 100 mA IC = 300 mA IB = 10 mA IC = 100 mA IC = 40 mA IC = 100 mA
t a
S a
e h
t e
U 4
.c
m o
NONE
MINIMUM
-30 -30 -3.
2N5583 Datasheet
