Description
The 2N5583 is Designed for High Frequency Amplifier, and Non Saturated Switching Applications. PACKAGE STYLE IC VCE PDISS TJ TSTG θJC 500 mA -30 V 1.0 W @ TA = 25 °C 5.0 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +200 °C 350 °C/W CHARACTERISTICS SYMBOL BVCEO BVCBO BVEBO ICBO IEBO hFE VCE(SAT) VBE(ON) ft Ccb Ceb rb'Cc td tr tf IC = 10 mA IC = 10 µA TC = 25 °C TEST CONDITIONS IC = 100 µA VCB = -20 V VEB = -2.0 V VCE = -2.0 V VCE = -5.0 V IC = 100 mA VCE = -2.0 V VCE = -10 V VCB = -15 V VEB = -0.5 V VCB = -10 V VCC = -31.4 V RC = 160 Ω w w .D w IC = 40 mA IC = 100 mA IC = 300 mA IB = 10 mA IC = 100 mA IC = 40 mA IC = 100 mA t a S a e h t e U 4 .c m o NONE MINIMUM -30 -30 -3.0 TYPICAL MAXIMUM UNITS V V V 50 500 20 25 15 100 -0.8 -1.8 nA nA --V V f = 100 MHz f = 100 MHz f = 100 KHz f = 100 KHz 1000 1300 5.0 35 8.2 1.2 2.2 2.0 IC = 50 mA IC = 150 mA RE = 26.6 Ω f = 63.6 MHz w A D V A N C E D S E M I C O N D U C T O R, I N C.
