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5082-3081 - SILICON PIN DIODE

General Description

The ASI 5082-3081 PIN Diode is Designed for Low Power RF Switching and Attenuating Applications.

I V PDISS TJ TSTG TSOLD 250 mA 100 V 250 mW @ TC = 25 °C -65 °C to +150 °C -65 °C to +150 °C 260 °C for 5 sec.

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Datasheet Details

Part number 5082-3081
Manufacturer Advanced Semiconductor
File Size 13.16 KB
Description SILICON PIN DIODE
Datasheet download datasheet 5082-3081 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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5082-3081 SILICON PIN DIODE PACKAGE STYLE 15 DESCRIPTION: The ASI 5082-3081 PIN Diode is Designed for Low Power RF Switching and Attenuating Applications. MAXIMUM RATINGS I V PDISS TJ TSTG TSOLD 250 mA 100 V 250 mW @ TC = 25 °C -65 °C to +150 °C -65 °C to +150 °C 260 °C for 5 sec. CHARACTERISTICS SYMBOL VR VF τ RS Ct RH RL IR = 10 µA TC = 25 °C TEST CONDITIONS IF = 100 mA IF = 50 mA IF = 100 mA VR = 50 V IF = 10 µA IF = 20 mA IR = 250 mA f = 100 MHz f = 1.0 MHz f =100 MHz f = 100 MHz MINIMUM TYPICAL MAXIMUM 100 1.0 2500 3.5 0.4 1500 8.0 UNITS V V nS Ω pF Ω Ω A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV.