ASAT10 - NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor

General Description

.020 x 45° A Ø .130 NOM.

Key Features

Input Matching Network.
Omnigold™ Metalization System D C L B M F E G.

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ASAT10 npn silicon rf power transistor by Advanced Semiconductor - Datasheet Preview

Datasheet Details

Part number	ASAT10
Manufacturer	Advanced Semiconductor
File Size	17.09 KB
Description	NPN SILICON RF POWER TRANSISTOR
Datasheet	ASAT10 Datasheet

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ASAT15	NPN SILICON RF POWER TRANSISTOR
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ASAT30	NPN SILICON RF POWER TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ASAT10 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ASAT10 is Designed for PACKAGE STYLE .250 2L FLG(A) .020 x 45° A Ø .130 NOM. .050 x 45° FEATURES: • Input Matching Network • • Omnigold™ Metalization System D C L B M F E G MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θ JC O H I J K 2.3 A DIM MINIMUM inches / mm MAXIMUM inches / mm 45 V 15 V 3.5 V 29 W @ TC = 25 C -65 C to +200 C -65 OC to +150 OC 6.0 OC/W O A B C D E F G H I J K L M .055 / 1.40 .124 / 3.15 .243 / 6.17 .635 / 16.13 .555 / 14.10 .739 / 18.77 .315 / 8.00 .002 / 0.05 .055 / 1.40 .075 / 1.91 .245 / 6.22 .092 / 2.34 .065 / 1.65 .253 / 6.43 .665 / 16.89 .565 / 14.35 .749 / 19.02 .325 / 8.26 .006 / 0.15 .065 / 1.65 .095 / 2.41 .190 / 4.83 .255 / 6.