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ASI2003 Datasheet PDF

Advanced Semiconductor ASI2003

The ASI 2003 is Designed for General Purpose Class C Power Amplifier Applications up to 2300 MHz.
Part No. ASI2003
Datasheet ASI2003 Download
Manufacturer
Advanced Semiconductor
Description NPN SILICON RF POWER TRANSISTOR
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ASI2003 datasheet page 1 preview

DESCRIPTION

: PACKAGE STYLE .250 2L FLG A ØD C E .060 x 45° CHAMFER B

FEATURES

:
● PG = 10 dB min. at 3 W/ 2,000 MHz
● Hermetic Microstrip Package
● Omnigold™ Metalization System L G H J F I K P MN DIM A MINIMUM inches / mm MAXIMUM inches / mm .028 / 0.71 .740 / 18.80 .245 / 6.22 .128 / 3.25 .125 / 3.18 .110 / 2.79 .117 / 2.97 .560 / 14.22 .790 / 20.07 .225 / 5.72 .165 / 4.19 .003 / 0.08 .058 / 1.47 .119 / 3.02 .149 / 3.78 .032 / 0.81 .255 / 6.48 .132 / 3.35 .117 / 2.97 .570 / 14.48 .810 / 20.57 .235 / 5.97 .185 / 4.70 .007 / 0.18 .068 / 1.73 .135 / 3.43 .187 / 4.75

MAXIMUM RATINGS

IC VCC PDISS TJ TSTG θ JC 600 mA 35 V 21.8 W @ TC = 25 C -65 OC to +200 OC -65 OC to +200 OC 15 OC/W O B C D E F G H I J K L M N P ORDER CODE: ASI10528 CHARACTERISTICS SYMBOL BVCBO BVCER BVEBO ICBO hFE Cob PG ηC IC = 1 mA IC = 5 mA IE = 1 mA VCB = 28 V TC = 25 C O NONETEST CONDITIONS RBE = 10 Ω MINIMUM TYPICAL MAXIMUM 45 45 3.5 1.0 UNITS V V V mA --pF dB % VCE = 5.0 V VCB = 28 V VCC = 28 V IC = 200 mA f = 1.0 MHz POUT = 3.0 W f = 2.0 GHz 15 120 3.5 10 35 A D V A N C E D S E M I C O N D U C T O R, I N C.