ASI3003 Datasheet PDF | Advanced Semiconductor

Advanced Semiconductor ASI3003

The ASI 3003 is Designed for General Purpose Class C Power Amplifier Applications up to 3500 MHz.

Part No.	ASI3003
Datasheet	ASI3003 Download
Manufacturer	Advanced Semiconductor
Description	NPN SILICON RF POWER TRANSISTOR
Buy	Stock & Price

DESCRIPTION

: B PACKAGE STYLE .250 2L FLG A ØD C E .060 x 45° CHAMFER

FEATURES

:
● PG = 5 dB min. at 3 W / 3,000 MHz
● Hermetic Microstrip Package
● Omnigold™ Metalization System DIM A L G H J F I K P MN MINIMUM inches / mm MAXIMUM inches / mm .028 / 0.71 .740 / 18.80 .245 / 6.22 .128 / 3.25 .125 / 3.18 .110 / 2.79 .117 / 2.97 .560 / 14.22 .790 / 20.07 .225 / 5.72 .165 / 4.19 .003 / 0.08 .058 / 1.47 .119 / 3.02 .149 / 3.78 .032 / 0.81 .255 / 6.48 .132 / 3.35 .117 / 2.97 .570 / 14.48 .810 / 20.57 .235 / 5.97 .185 / 4.70 .007 / 0.18 .068 / 1.73 .135 / 3.43 .187 / 4.75

MAXIMUM RATINGS

IC VCC PDISS TJ TSTG θ JC 20 mA 30 V 6.0 W @ TC = 25 C -65 OC to +200 OC -65 C to +200 C 15 OC/W O B C D E F G H O I J K L M N P O O ORDER CODE: ASI10539 CHARACTERISTICS SYMBOL BVCBO BVCER BVEBO ICBO hFE COB PG ηC IC = 1 mA IC = 5 mA IE = 10 mA VCB = 28 V TC = 25 C NONETEST CONDITIONS RBE = 10 Ω MINIMUM TYPICAL MAXIMUM 45 45 3.5 0.5 UNITS V V V mA --pF dB % VCE = 5.0 V VCB = 28 V VCC = 28 V IC = 200 mA f = 1.0 MHz POUT = 3.0 W f = 3.0 GHz 30 300 5.0 5.0 30 A D V A N C E D S E M I C O N D U C T O R, I N C.