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AVD0.5P - NPN SILICON RF POWER TRANSISTOR

Download the AVD0.5P datasheet PDF. This datasheet also covers the AVD05P variant, as both devices belong to the same npn silicon rf power transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

The ASI AVD0.5P is Designed for

Key Features

  • Omnigold™ Metalization System.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AVD05P_AdvancedSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AVD0.5P
Manufacturer Advanced Semiconductor
File Size 15.95 KB
Description NPN SILICON RF POWER TRANSISTOR
Datasheet download datasheet AVD0.5P Datasheet

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Other Datasheets by Advanced Semiconductor

Part Number Description
AVD002F NPN SILICON RF POWER TRANSISTOR
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
AVD0.5P NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI AVD0.5P is Designed for FEATURES: • • • Omnigold™ Metalization System MAXIMUM RATINGS IC 300 mA VCE 20 V PDISS TJ TSTG θJC --- W -65 OC to +200 OC -65 OC to +150 OC 35.0 OC/W PACKAGE STYLE .280 4L PILL A S ØB D S G ØC D EF DIM MINIMUM inches / mm A .220 / 5.59 B C .275 / 6.99 D .004 / 0.10 E .050 / 1.27 F .118 / 3.00 MAXIMUM inches / mm .230 / 5.84 1.055 / 26.80 .285 / 7.24 .006 / 0.15 .060 . 1.52 .130 / 3.30 ORDER CODE: ASI10551 CHARACTERISTICS TC = 25 OC SYMBOL NONETEST CONDITIONS BVCBO IC = 1 mA BVCEO IC = 5 mA BVEBO IE = 1 mA ICES VCE = 28 V hFE VCE = 5.0 V IC = 100 mA MINIMUM TYPICAL MAXIMUM 50 20 3.5 1.0 15 120 UNITS V V V mA --- PG VCC = 12.5 V POUT = 0.