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AVD002P - NPN SILICON RF POWER TRANSISTOR

General Description

The ASI AVD002P is Designed for A .100x45°

Key Features

  • Omnigold™ Metalization System C B ØG D.

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Datasheet Details

Part number AVD002P
Manufacturer Advanced Semiconductor
File Size 15.75 KB
Description NPN SILICON RF POWER TRANSISTOR
Datasheet download datasheet AVD002P Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AVD002P NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .280 4L PILL (A) DESCRIPTION: The ASI AVD002P is Designed for A .100x45° FEATURES: • • • Omnigold™ Metalization System C B ØG D MAXIMUM RATINGS IC VCC PDISS TJ TSTG θ JC 250 mA 37 V 10 W @ TC ≤ 100 OC -65 OC to +200 OC -65 OC to +150 OC 10 OC/W DIM A B C D E F G .275 / 6.99 MINIMUM inches / mm E F MAXIMUM inches / mm .095 / 2.41 .195 / 4.95 1.000 / 25.40 .004 / 0.10 .050 / 1.27 .105 / 2.67 .205 / 5.21 .007 / 0.18 .065 / 1.65 .145 / 3.68 .285 / 7.21 ORDER CODE: ASI10553 CHARACTERISTICS SYMBOL BVCBO BVCER BVEBO ICES hFE PG ηC IC = 1 mA IC = 5 mA IE = 1 mA VCE = 35 V TC = 25 C O NONETEST CONDITIONS RBE = 10 Ω MINIMUM TYPICAL MAXIMUM 45 45 3.5 1.0 UNITS V V V mA --dB % VCE = 5.0 V VCC = 35 V MHz IC = 100 A POUT = 2.