AVD015P - NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor

General Description

The ASI AVD015P is Designed for A .100x45°

Key Features

Omnigold™ Metalization System C B ØG D.

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AVD015P npn silicon rf power transistor by Advanced Semiconductor - Datasheet Preview

Datasheet Details

Part number	AVD015P
Manufacturer	Advanced Semiconductor
File Size	15.62 KB
Description	NPN SILICON RF POWER TRANSISTOR
Datasheet	AVD015P Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AVD015P NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .280 4L PILL (A) DESCRIPTION: The ASI AVD015P is Designed for A .100x45° FEATURES: • • • Omnigold™ Metalization System C B ØG D MAXIMUM RATINGS IC VCB PDISS TJ TSTG θ JC 1.25 A PEAK 50 V 50 W PEAK DIM A B C D E F G .275 / 6.99 MINIMUM inches / mm inches / mm E F MAXIMUM .105 / 2.67 .205 / 5.21 .095 / 2.41 .195 / 4.95 1.000 / 25.40 .004 / 0.10 .050 / 1.27 -65 OC to +200 OC -65 OC to +150 OC 2.0 OC/W .007 / 0.18 .065 / 1.65 .145 / 3.68 .285 / 7.21 ORDER CODE: ASI10557 CHARACTERISTICS SYMBOL BVCBO BVCER BVEBO ICES hFE PG ηC IC = 10 mA IC = 10 mA IE = 1 mA VCB = 50 V TC = 25 C O NONETEST CONDITIONS RBE = 10 Ω MINIMUM TYPICAL MAXIMUM 65 65 3.5 2.5 UNITS V V V mA --dB % VCE = 5.