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AVD250 Datasheet PDF

Advanced Semiconductor AVD250

AVD250 is Designed for 2X B C F ØD E 4x .062 x 45° A .025 x 45° FEATURES: • Input Matching Network • • Omnigold™ Metalization System DIM A B C H L G I J K P M MINIMUM inches / mm N MAXIMUM inches / mm MAXIMUM RATINGS IC VCC PDISS TJ TSTG θ JC O O .020 / 0.51 .100 / 2.54 .376 / 9.55 .110 / 2.79 .395 / 10.03 .193 / 4.90 .450 / 11.43 .125 / 3.18 .640 / 16.26 .890 / 22.61 .395 / 10.03 .004 / 0.10 .052 / 1.32 .118 / 3.00 .030 / 0.76 .396 / 10.06 .130 / 3.30 .407 / 10.34 17.8 A 55 V 600 W @ TC ≤ 80 C O D E F G H I J K L M .660 / 16.76 .910 / 23.11 .415 / 10.54 .007 / 0.18 .072 / 1.83 .131 / 3.33...
Part No. AVD250
Datasheet AVD250 Download
Manufacturer
Advanced Semiconductor
Description NPN SILICON RF POWER TRANSISTOR
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AVD250 datasheet page 1 preview

DESCRIPTION

: The ASI AVD250 is Designed for 2X B C F ØD E 4x .062 x 45° A .025 x 45°

FEATURES

:
● Input Matching Network
●
● Omnigold™ Metalization System DIM A B C H L G I J K P M MINIMUM inches / mm N MAXIMUM inches / mm

MAXIMUM RATINGS

IC VCC PDISS TJ TSTG θ JC O O .020 / 0.51 .100 / 2.54 .376 / 9.55 .110 / 2.79 .395 / 10.03 .193 / 4.90 .450 / 11.43 .125 / 3.18 .640 / 16.26 .890 / 22.61 .395 / 10.03 .004 / 0.10 .052 / 1.32 .118 / 3.00 .030 / 0.76 .396 / 10.06 .130 / 3.30 .407 / 10.34 17.8 A 55 V 600 W @ TC ≤ 80 C O D E F G H I J K L M .660 / 16.76 .910 / 23.11 .415 / 10.54 .007 / 0.18 .072 / 1.83 .131 / 3.33 .230 / 5.84 -65 C to +250 C -65 C to +200 C 0.2 OC/W O O N P ORDER CODE: ASI10565 CHARACTERISTICS SYMBOL BVCBO BVCER BVEBO ICES hFE PG ηC IC = 10 mA IC = 25 mA IE = 1 mA VCE = 50 V TC = 25 C O NONETEST CONDITIONS RBE = 10 Ω MINIMUM TYPICAL MAXIMUM 65 65 3.5 25 UNITS V V V mA --dB % VCE = 5.0 V VCC = 50 V MHz IC = 1.0 A POUT = 250 W f = 1025 - 1150 15 6.2 40 120 A D V A N C E D S E M I C O N D U C T O R, I N C.