Advanced Semiconductor BLV31
BLV31 is Designed for use in VHF amplifiers B A 45° C E B E FEATURES: • PG = 16.5 dB Typical at 224 MHz • Omnigold™ Metallization System F G D E C J I MAXIMUM RATINGS IC VCB PDISS TJ TSTG θJC 3A 60 V 48 W @ TC = 25 C -65 C to +200 C -65 C to +150 C 3.5 C/W O O O O O O D IM A B C D E F G H I J K .1 7 5 / 4 .4 5 .2 7 5 / 6 .9 9 .2 4 5 / 6 .2 2 M I N IM U M in c h e s / m m H K # 8 -3 2 U N C M A X IM U M in c h e s / m m 1 .| Part No. | BLV31 |
|---|---|
| Datasheet | BLV31 Download |
| Manufacturer |  Advanced Semiconductor |
| Description | NPN SILICON RF POWER TRANSISTOR |
| Buy | Stock & Price |
DESCRIPTION
: The ASI 0 1 0 / 2 5 .6 5 .2 2 0 / 5 .5 9 .2 7 0 / 6 .8 6 .0 0 3 / 0 .0 8 .1 1 7 / 2 .9 7 .5 7 2 / 1 4 . 5 3 .1 3 0 / 3 .3 0 1 . 0 5 5 / 2 6 .8 0 .2 3 0 / 5 .8 4 .2 8 5 / 7 .2 4 .0 0 7 / 0 .1 8 .1 3 7 / 3 .4 8 .2 5 5 / 6 .4 8 .6 4 0 / 1 6 . 2 6 .2 1 7 / 5 .5 1 .2 8 5 / 7 .2 4 CHARACTERISTICS SYMBOL BVCEO BVCES BVEBO hFE COB POUT TC = 25 C O TEST CONDITIONS IC = 100 mA IC = 25mA IE = 10 mA VCE = 25 V VCB = 25 V VCE = 25 V F = 224 MHz IC= 800 mA O T= 70 C IC = 800 mA f = 1.0 MHz PIN = 2.5 W VBE = 0 V MINIMUM TYPICAL MAXIMUM 30 60 4 15 75 35 5.0 15 7.0* 16.5* 120 UNITS V V V --pF W dB PG * @ 25 C O A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE● NORTH HOLLYWOOD, CA 91605
● (818) 982-1200
● FAX (818) 765-3004 Specifications are subject to change without notice. REV 0 1/1