BLW31 - NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor

General Description

The ASI BLW31 is an NPN power transistor, designed 108-175 MHz applications.

Key Features

Common Emitter-Class-C.
PG = 10 dB at 30 W/150 MHz.
Omnigold™ Metalization System E B H I J D.

📥 Download Datasheet

BLW31 npn silicon rf power transistor by Advanced Semiconductor - Datasheet Preview

Datasheet Details

Part number	BLW31
Manufacturer	Advanced Semiconductor
File Size	27.59 KB
Description	NPN SILICON RF POWER TRANSISTOR
Datasheet	BLW31 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
BLW30	VHF power transistor	NXP
BLW32	UHF linear power transistor	NXP
BLW33	UHF linear power transistor	NXP
BLW34	UHF linear power transistor	NXP
BLW34	NPN SILICON RF POWER TRANSISTOR	ASI

Other Datasheets by Advanced Semiconductor

Part Number	Description
BLW75	NPN SILICON RF POWER TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

BLW31 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLW31 is an NPN power transistor, designed 108-175 MHz applications. The device utilizes diffused emitter resistors to achieve good VSWR capability PACKAGE STYLE .380 4L STUD .112x45° A B C E ØC FEATURES: • Common Emitter-Class-C • PG = 10 dB at 30 W/150 MHz • Omnigold™ Metalization System E B H I J D MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θJC 4.0 A 36 V 18 V 4.0 V 40 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 4.4 °C/W DIM A B C D E F G H I J #8-32 UNC-2A F E G MINIMUM inches / mm MAXIMUM inches / mm .220 / 5.59 .980 / 24.89 .370 / 9.40 .004 / 0.10 .320 / 8.13 .100 / 2.54 .450 / 11.43 .090 / 2.29 .155 / 3.94 .230 / 5.84 .385 / 9.78 .007 / 0.18 .330 / 8.38 .130 / 3.30 .490 / 12.45 .100 / 2.54 .175 / 4.