BLX14 - NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor

General Description

The ASI BLX14 is Designed for HF and VHF band applications.

Key Features

PG = 13 dB min. at 15 W/1.6 MHz.
d3 = -40 dB typ. at 15 W (PEP).
Omnigold™ Metalization System B C B E G 1/4-28 UNF-2A F H.

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BLX14 npn silicon rf power transistor by Advanced Semiconductor - Datasheet Preview

Datasheet Details

Part number	BLX14
Manufacturer	Advanced Semiconductor
File Size	13.91 KB
Description	NPN SILICON RF POWER TRANSISTOR
Datasheet	BLX14 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BLX14 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLX14 is Designed for HF and VHF band applications. PACKAGE STYLE .500 4L STUD (A) .112 x 45° A Ø .630 NOM C E E D FEATURES: • PG = 13 dB min. at 15 W/1.6 MHz • d3 = -40 dB typ. at 15 W (PEP) • Omnigold™ Metalization System B C B E G 1/4-28 UNF-2A F H MAXIMUM RATINGS IC VCBO VEBO VCEO PDISS TJ TSTG θJC 4.0 A 85 V 4.0 V 36 V 88 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +200 °C 1.99 °C/W DIM A B C D E F G H MINIMUM inches / mm MAXIMUM inches / mm .220 / 5.59 .545 / 13.84 .495 / 12.57 .003 / 0.08 .185 / 4.70 .497 / 12.62 .230 / 5.84 1.050 / 26.67 .555 / 14.10 .505 / 12.83 .007 / 0.18 .830 / 21.08 .198 / 5.03 .530 / 13.