BLX14
BLX14 is NPN SILICON RF POWER TRANSISTOR manufactured by Advanced Semiconductor.
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI BLX14 is Designed for HF and VHF band applications.
PACKAGE STYLE .500 4L STUD (A)
.112 x 45° A Ø .630 NOM C E E D
Features
:
- PG = 13 d B min. at 15 W/1.6 MHz
- d3 = -40 d B typ. at 15 W (PEP)
- Omnigold™ Metalization System
G 1/4-28 UNF-2A F H
MAXIMUM RATINGS
IC VCBO VEBO VCEO PDISS TJ TSTG θJC 4.0 A 85 V 4.0 V 36 V 88 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +200 °C 1.99 °C/W
DIM A B C D E F G H
MINIMUM inches / mm
MAXIMUM inches / mm
.220 / 5.59 .545 / 13.84 .495 / 12.57 .003 / 0.08 .185 / 4.70 .497 / 12.62
.230 / 5.84 1.050 / 26.67 .555 / 14.10 .505 / 12.83 .007 / 0.18 .830 / 21.08 .198 / 5.03 .530 / 13.46
CHARACTERISTICS
SYMBOL
BVCBO BVCER BVCEO BVEBO h FE f T CC GP d3 IC = 25 m A IC = 25 m A IC = 50 m A IE = 10 m A VCE = 6.0 V VCE = 20 V VCB = 30 V
TC = 25 °C
NONETEST CONDITIONS
RBE = 5.0 Ω
MINIMUM TYPICAL MAXIMUM
85 85 36 4.0
UNITS
IC = 1.4 A IC = 3.0 A f = 1.0 MHz
15 250 115...
