BLX39
BLX39 is NPN SILICON RF POWER TRANSISTOR manufactured by Advanced Semiconductor.
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI BLX39 is Designed for broadband amplifier operations up to 175 MHz.
PACKAGE STYLE .380 STUD
.112x45° A
Features
:
- PG = 7.6 d B min. at 40 W/175 MHz
- Emitter Resistors Ballasted
- Omnigold™ Metalization System
ØC
#8-32 UNC-2A F E
MAXIMUM RATINGS
IC VCB VCE PDISS TJ TSTG θJC 5.0 A 65 V 35 V 60 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 2.9 °C/W
DIM A B C D E F G H I J
MINIMUM inches / mm
MAXIMUM inches / mm
.220 / 5.59 .980 / 24.89 .370 / 9.40 .004 / 0.10 .320 / 8.13 .100 / 2.54 .450 / 11.43 .090 / 2.29 .155 / 3.94
.230 / 5.84
.385 / 9.78 .007 / 0.18 .330 / 8.38 .130 / 3.30 .490 / 12.45 .100 / 2.54 .175 / 4.45 .750 / 19.05
CHARACTERISTICS
SYMBOL
BVCEO BVCES BVEBO ICES h FE Cob PG ηC VCE = 28 V IC = 50 m A
TC = 25 °C
NONETEST CONDITIONS
IC = 200 m A IE = 10 m A VE = 28 V VCE = 5.0 V VCB = 28 V IC = 1.0 A f = 1.0 MHz
MINIMUM TYPICAL MAXIMUM
35 65 4.0 5 10 100 65 7.6
UNITS
V V V m A --p F d B...
