BLX93A Datasheet PDF | Advanced Semiconductor

Advanced Semiconductor BLX93A

BLX93A is Designed for transmitting applications in class-A, B or C with a supply voltage up to 28 V PACKAGE STYLE .280 4L STUD A 45° C FEATURES: • High Gain - 9.0 dB • Omnigold™ Metallization System • Common Emitter B E B D C E J E F G I MAXIMUM RATINGS IC VCB PDISS TJ TSTG θJC 1.0 A 65 V 12.5 W @ TC = 25 °C -65 to +200 °C -65 to +150 °C 9.8 °C/W DIM A B C D E F G H I J K .175 / 4.45 .275 / 6.99 .245 / 6.22 MINIMUM inches / mm H K #8-32 UNC MAXIMUM inches / mm 1.010 / 25.65 .220 / 5.59 .270 / 6.86 .003 / 0.08 .117 / 2.97 .572 / 14.53 .130 / 3.30 1.055 / 26.80 .230 /5.84 .285 / 7.24 .007 /...

Part No.	BLX93A
Datasheet	BLX93A Download
Manufacturer	Advanced Semiconductor
Description	NPN SILICON RF POWER TRANSISTOR
Buy	Stock & Price

DESCRIPTION

: The ASI BLX93A is Designed for transmitting applications in class-A, B or C with a supply voltage up to 28 V PACKAGE STYLE .280 4L STUD A 45° C

FEATURES

:
● High Gain - 9.0 dB
● Omnigold™ Metallization System
● Common Emitter B E B D C E J E F G I

MAXIMUM RATINGS

IC VCB PDISS TJ TSTG θJC 1.0 A 65 V 12.5 W @ TC = 25 °C -65 to +200 °C -65 to +150 °C 9.8 °C/W DIM A B C D E F G H I J K .175 / 4.45 .275 / 6.99 .245 / 6.22 MINIMUM inches / mm H K #8-32 UNC MAXIMUM inches / mm 1.010 / 25.65 .220 / 5.59 .270 / 6.86 .003 / 0.08 .117 / 2.97 .572 / 14.53 .130 / 3.30 1.055 / 26.80 .230 /5.84 .285 / 7.24 .007 / 0.18 .137 / 3.48 .255 / 6.48 .640 / 16.26 .217 / 5.51 .285 / 7.24 CHARACTERISTICS SYMBOL BVCBO BVCES BVCEO BVEBO hFE FT Cc Ce PG ηC IC = 10 mA IC = 10 mA IC = 25 mA IE = 1.0 mA VCE = 5.0 V VCE = 5.0 V VCB = 10 V VEB = 0 V VCE = 28 V TC = 25 °C NONE TEST CONDITIONS MINIMUM TYPICAL MAXIMUM 65 65 33 4.0 UNITS V V V V --- IC = 100 mA IC = 200 mA f = 1.0 MHz f = 1.0 MHz POUT = 7.0 W f = 470 MHz 10 1.2 14 60 8.5 60 9.0 75 GHz pF pF dB % A D V A N C E D S E M I C O N D U C T O R, I N C.