BM30-12 - NPN SILICON RF POWER TRANSISTOR

Description

The ASI BM30-12 is Designed for VHF land mobil applications in the 150175 MHZ range.

Features

Common Emitter.
POUT = 30 W at175 MHz.
Omnigold™ Metalization System.
Internal Matching network D C E E B B G .725/18,42 F K H D IM A B C .210 / 5.33 .835 / 21.21 .200 / 5.08 .490 / 12.45 .003 / 0.08 .125 / 3.18 .725 / 18.42 .970 / 24.64 .090 / 2.29 .150 / 3.81 .120 / 3.05 .980 / 24.89 .105 / 2.67 .170 / 4.32 .285 / 7.24 .135 / 3.43 D E F G H I J K L M N M IN IM U M inches / m m 2x Ø N FU LL R E.

Advanced Semiconductor

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Datasheet Details

Part number	BM30-12
Manufacturer	Advanced Semiconductor
File Size	90.30 KB
Description	NPN SILICON RF POWER TRANSISTOR
Datasheet	BM30-12 Datasheet
Additional preview pages of the BM30-12 datasheet.

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Full PDF Text Transcription

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BM30-12 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BM30-12 is Designed for VHF land mobil applications in the 150175 MHZ range. PACKAGE STYLE .500 6L FLG C A FEATURES: • Common Emitter • POUT = 30 W at175 MHz • Omnigold™ Metalization System • Internal Matching network D C E E B B G .725/18,42 F K H D IM A B C .210 / 5.33 .835 / 21.21 .200 / 5.08 .490 / 12.45 .003 / 0.08 .125 / 3.18 .725 / 18.42 .970 / 24.64 .090 / 2.29 .150 / 3.81 .120 / 3.05 .980 / 24.89 .105 / 2.67 .170 / 4.32 .285 / 7.24 .135 / 3.43 D E F G H I J K L M N M IN IM U M inches / m m 2x Ø N FU LL R E MAXIMUM RATINGS IC VCES VCEO VEBO PDISS TJ TSTG θJC 8.0 A 36 V 18 V 4.0 V 65 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +200 °C 2.7 °C/W M L J I M AXIM U M inches / m m .150 / 3.43 .045 / 1.14 .160 / 4.

Published: Jan 8, 2010 |