BM30-12
BM30-12 is NPN SILICON RF POWER TRANSISTOR manufactured by Advanced Semiconductor.
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI BM30-12 is Designed for VHF land mobil applications in the 150175 MHZ range.
PACKAGE STYLE .500 6L FLG
Features
:
- mon Emitter
- POUT = 30 W at175 MHz
- Omnigold™ Metalization System
- Internal Matching network
B G .725/18,42 F K H D IM A B C .210 / 5.33 .835 / 21.21 .200 / 5.08 .490 / 12.45 .003 / 0.08 .125 / 3.18 .725 / 18.42 .970 / 24.64 .090 / 2.29 .150 / 3.81 .120 / 3.05 .980 / 24.89 .105 / 2.67 .170 / 4.32 .285 / 7.24 .135 / 3.43 D E F G H I J K L M N M IN IM U M inches / m m
2x Ø N FU LL R
MAXIMUM RATINGS
IC VCES VCEO VEBO PDISS TJ TSTG θJC 8.0 A 36 V 18 V 4.0 V 65 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +200 °C 2.7 °C/W
M AXIM U M inches / m m
.150 / 3.43 .045 / 1.14
.160 / 4.06 .220 / 5.59 .865 / 21.97 .210 / 5.33 .510 / 12.95 .007 / 0.18
..
CHARACTERISTICS
SYMBOL
BVCES BVCEO BVEBO Cob POUT PIN ηC ZIN ZL IC = 20 m A IC = 50 m A IE = 5.0 m A
TC = 25 °C
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
36 18 4.0
UNITS
VCB = 12.5 V VCC = 12.5 V POUT = 40 W f = 1.0 MHz f = 175 MHz 30
110 p F W
4.5 60 1.0 + j1.4 1.75 + j0.5
W % Ω...
