CBSL30B - NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor

General Description

.020 x 45° B A Ø.130 NOM.

Key Features

Omnigold™ Metalization System F H I J G.

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CBSL30B npn silicon rf power transistor by Advanced Semiconductor - Datasheet Preview

Datasheet Details

Part number	CBSL30B
Manufacturer	Advanced Semiconductor
File Size	17.85 KB
Description	NPN SILICON RF POWER TRANSISTOR
Datasheet	CBSL30B Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CBSL30B NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CBSL30B is Designed for PACKAGE STYLE .250 BAL FLG .020 x 45° B A Ø.130 NOM. .050 x 45° E D C N FEATURES: • • • Omnigold™ Metalization System F H I J G MAXIMUM RATINGS IC VCBO VCES VEBO PDISS TJ TSTG θ JC 5.0 A 48 V 45 V 4.0 V 43 W @ TC = 25 C -65 OC to +200 OC -65 C to +150 C 3.0 OC/W O O O DIM A B C D E F G H I J K L M N .245 / 6.22 .555 / 14.10 .739 / 18.77 .315 / 8.00 .002 / 0.05 .055 / 1.40 .075 1.91 .243 / 6.17 .630 / 16.00 .092 / 2.34 .055 / 1.40 .125 / 3.18 MINIMUM inches / mm L K M MAXIMUM inches / mm .060 / 1.52 .065 / 1.65 .255 / 6.48 .670 / 17.01 .565 / 14.35 .750 / 19.05 .327 / 8.31 .006 / 0.15 .065 / 1.65 .095 / 2.41 .190 / 4.83 .257 / 6.